| PART |
Description |
Maker |
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| DXTP19020DP5 DXTP19020DP5-13 DXTP19020DP5-15 |
20V PNP HIGH GAIN TRANSISTOR PowerDI?5
20V PNP HIGH GAIN TRANSISTOR PowerDI垄莽5
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
| 27C64-25E/P 27C64-25E/J 27C64-25E/TS 27C64-25E/SO |
330MHz, Gain of 1/Gain of 2 Closed-Loop Buffers
Evaluation Kit for the MAX4159, MAX4259
High-Speed, Low-Distortion, Differential Line Receivers
SOT23, Rail-to-Rail, Fixed-Gain, Gain Amps/Open-Loop Op Amps x8存储
x8 EPROM x8存储
|
Microchip Technology, Inc.
TUSONIX, Inc.
|
| HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL
HCPL-0931 · High Speed Digital Isolator
HCPL-0930 · High Speed Digital Isolator
HCPL-092J · High Speed Digital Isolator
HCPL-091J · High Speed Digital Isolator
HCPL-090J · High Speed Digital Isolator
HCPL-0900 · High Speed Digital Isolator
HCPL-9000 · High Speed Digital Isolator
HCPL-9030 · High Speed Digital Isolator
HCPL-902J · High Speed Digital Isolator
HCPL-9031 · High Speed Digital Isolator
HCPL-900J · High Speed Digital Isolator
HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
| LT1028A LT1128A LT1028CSW |
Ultralow Noise Precision High Speed Op Amps
Unity Gain Stable Ultra-Low Noise Precision High Speed Op Amp
Ultra Low Noise Precision High Speed Op Amps
|
Linear Technology
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| LT1102 LT1102AC LT1102ACH LT1102ACN8 LT1102AM LT11 |
From old datasheet system
High Speed Precision JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100)
High Speed, Precision, JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100)
|
LINER[Linear Technology]
|
| BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
